Very-high power density AlGaN/GaN HEMTs

Author

Wu, Yi-Feng ; Kapolnek, David ; Ibbetson, James P. ; Parikh, Primit ; Keller, Bernd P. ; Mishra, Umesh K.

Author_Institution

Cree Lighting Co., Goleta, CA, USA

Volume

48

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

586

Lastpage

590

Abstract

Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN HEMT´s. 100-150 μm wide devices grown on SiC substrates demonstrated a record power density of 9.8 W/mm at 8 GHz, which is about ten times higher than GaAs-based FETs; similar devices grown on sapphire substrates showed 6.5 W/mm, which was thermally limited, 2-mm-wide devices flip-chip mounted on to AlN substrates produced 9.2-9.8 W output power at 8 GHz with 44-47% PAE. A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date

Keywords

III-V semiconductors; aluminium compounds; flip-chip devices; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; 14 W; 44 to 47 percent; 8 GHz; 9.2 to 9.8 W; AlGaN-GaN; AlGaN/GaN HEMT; AlN substrate; CW power density; FET; SiC substrate; flip-chip amplifier integrated circuit; large-signal current-voltage characteristics; sapphire substrate; Aluminum gallium nitride; Electric breakdown; Electron mobility; Gallium nitride; HEMTs; MODFETs; Microwave FET integrated circuits; Power generation; Silicon carbide; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.906455

Filename

906455