Title :
AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy
Author :
Micovic, Miroslav ; Kurdoghlian, Ara ; Janke, Paul ; Hashimoto, Paul ; Wong, Danny W S ; Moon, Jeong S. ; McCray, Loren ; Nguyen, Chanh
Author_Institution :
HRL Labs., Malibu, CA, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
In this work, we demonstrate state of the art performance of GaN HFETs grown on SiC by rf Nitrogen plasma assisted molecular beam epitaxy (MBE) at 10 and 20 GHz and good power scalability of these devices at 10 GHz. A single stage power amplifier built by power combining four of our 1 mm devices exhibits continuous wave output power of 22.9 W with associated power added efficiency (PAE) of 37% at 9 GHz. This is to the best of our knowledge the highest CW power and the best combination of power and PAE demonstrated to date for a GaN based microwave integrated circuit at this frequency
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; plasma deposition; power field effect transistors; wide band gap semiconductors; 10 GHz; 20 GHz; 22.9 W; 37 percent; AlGaN-GaN; AlGaN/GaN heterojunction field effect transistor; CW output power; RF nitrogen plasma assisted molecular beam epitaxy; SiC substrate; microwave integrated circuit; power added efficiency; power amplifier; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Nitrogen; Power amplifiers; Silicon carbide;
Journal_Title :
Electron Devices, IEEE Transactions on
