DocumentCode
1446197
Title
A 22–31 GHz Distributed Amplifier Based on High-Pass Transmission Lines Using 0.18 
CMOS Technology
Author
Chen, Ping ; Huang, Pin-Cheng ; Kuo, Jhe-Jia ; Wang, Huei
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
21
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
160
Lastpage
162
Abstract
This letter demonstrates a 22-31 GHz CMOS distributed amplifier (DA) based on high-pass transmission lines. Unlike the low-pass DA, the circuit can be smaller since it does not need extra drain bias circuits. This DA has a maximum output power of 12 dBm, a maximum OP1dB of 6.5 dBm, and a small signal gain of 6.4 dB. The chip occupies a miniature area of 0.28 mm2 including the pads and the core area is only 0.17 mm2.
Keywords
CMOS analogue integrated circuits; MMIC amplifiers; distributed amplifiers; field effect MIMIC; field effect MMIC; millimetre wave amplifiers; transmission lines; CMOS distributed amplifier; CMOS technology; drain bias circuits; frequency 22 GHz to 31 GHz; gain 6.4 dB; high-pass transmission lines; low-pass DA; size 0.18 mum; small signal gain; Cutoff frequency; Delay; Logic gates; Power transmission lines; Semiconductor device measurement; Transistors; Transmission line measurements; Distributed amplifier (DA); high-pass artificial transmission line;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2010.2104138
Filename
5710597
Link To Document