Title :
Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing
Author :
Li, C.I. ; Shen, T.M. ; Kuo, P. ; Liu, R. ; Chan, M. ; Yang, C.L. ; Wu, J.Y. ; Colombeau, B. ; Guo, B.N. ; Thanigaivelan, T. ; Toh, T. ; Sun, H.L. ; Wu, T. ; Lu, S.
Author_Institution :
Adv. Technol. Dev. Div., United Microelectron. Corp., Tainan, Taiwan
fDate :
4/1/2011 12:00:00 AM
Abstract :
In this letter, for the first time, the integration benefits of a molecular carborane (CBH-C2B10H12) implant on a state-of-the-art 28-nm logic flow are demonstrated and discussed via advanced modeling. It is shown that, by integrating CBH, pLDD formation can be optimized to provide device benefits via profile/damage engineering.
Keywords :
MOSFET; ion implantation; logic devices; semiconductor device manufacture; semiconductor process modelling; CBH; complementary metal-oxide-semiconductor logic device; ion implantation; logic flow; logic pFET device manufacturing; molecular carborane implant; pLDD formation; semiconductor device modeling; size 28 nm; Annealing; Boron; Carbon; Implants; Junctions; Logic gates; Semiconductor process modeling; Complementary metal–oxide–semiconductor logic devices; ion implantation; process modeling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2105855
