Floating Gate CMOS Dosimeter With Frequency Output

Author

Garcia-Moreno, E. ; Isern, E. ; Roca, M. ; Picos, R. ; Font, J. ; Cesari, J. ; Pineda, A.

Author_Institution

Phys. Dept., Univ. of the Balearic Islands, Palma, Spain

Volume

59

Issue

2

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

373

Lastpage

378

Abstract

This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.

Keywords

dosimeters; radiation effects; silicon radiation detectors; CMOS dosimeter; CMOS technology; floating gate dosimeter; floating gate sensor; frequency output; gamma radiation dosimeter; radiation dose; radiation effects; reprogramming capabilities; signal processing circuitry; silicon area; square wave output signal; supply voltage; zero bias operation; Logic gates; Radiation effects; Sensitivity; Temperature measurement; Temperature sensors; Threshold voltage; Transistors; Floating gate MOSFET sensors; gamma dosimeter; radiation effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2184301

Filename

6151199