DocumentCode :
1446438
Title :
Floating Gate CMOS Dosimeter With Frequency Output
Author :
Garcia-Moreno, E. ; Isern, E. ; Roca, M. ; Picos, R. ; Font, J. ; Cesari, J. ; Pineda, A.
Author_Institution :
Phys. Dept., Univ. of the Balearic Islands, Palma, Spain
Volume :
59
Issue :
2
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
373
Lastpage :
378
Abstract :
This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.
Keywords :
dosimeters; radiation effects; silicon radiation detectors; CMOS dosimeter; CMOS technology; floating gate dosimeter; floating gate sensor; frequency output; gamma radiation dosimeter; radiation dose; radiation effects; reprogramming capabilities; signal processing circuitry; silicon area; square wave output signal; supply voltage; zero bias operation; Logic gates; Radiation effects; Sensitivity; Temperature measurement; Temperature sensors; Threshold voltage; Transistors; Floating gate MOSFET sensors; gamma dosimeter; radiation effects;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2184301
Filename :
6151199
Link To Document :
بازگشت