DocumentCode
1446489
Title
Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer
Author
Yokoi, H. ; Mizumoto, T. ; Masaki, H. ; Futakuchi, N. ; Ohtsuka, T. ; Nakano, Y.
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Volume
37
Issue
4
fYear
2001
fDate
2/15/2001 12:00:00 AM
Firstpage
240
Lastpage
241
Abstract
Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns
Keywords
III-V semiconductors; aluminium compounds; indium compounds; magneto-optical isolators; optical phase shifters; optical waveguide components; oxidation; AlInAs; AlInAs oxide cladding layer; InP; InP substrate; magneto-optic waveguide; nonreciprocal phase shifter; optical isolator; selective oxidation; semiconductor guiding layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010145
Filename
907544
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