Title :
GaN/SiC p-n mesa junctions for HBTs fabricated using selective photoelectrochemical etching
Author :
Graff, J.W. ; Schubert, E.F. ; Osinsky, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
fDate :
2/15/2001 12:00:00 AM
Abstract :
GaN/SiC p-n junctions for heterojunction bipolar transistors have been fabricated using photoelectrochemical etching. The process was shown to have excellent selectivity between n- and p-type semiconductors, self-terminating at the p-type SiC layer. Smooth p-SiC surfaces were observed, and contact resistance on the etched surface of 3×10-3Ω·cm2 was achieved. This process has been used in the fabrication of HBTs
Keywords :
III-V semiconductors; contact resistance; etching; gallium compounds; heterojunction bipolar transistors; p-n heterojunctions; silicon compounds; wide band gap semiconductors; GaN-SiC; SiC; contact resistance; fabrication; heterojunction bipolar transistors; p-n mesa junctions; photoelectrochemical etching; selectivity; smooth p-SiC surfaces; wet chemical etch; wide band gap semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010150
