CMOS THz Generator With Frequency Selective Negative Resistance Tank

Author

Gu, Qun Jane ; Xu, Zhiwei ; Jian, Heng-Yu ; Pan, Bo ; Xu, Xiaojing ; Chang, Mau-Chung Frank ; Liu, Wei ; Fetterman, Harold

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

Volume

2

Issue

2

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

193

Lastpage

202

Abstract

This paper reports a CMOS terahertz oscillator with a novel frequency selective negative resistance (FSNR) tank to boost its operating frequency. The demonstrated oscillator can operate at a fundamental frequency of about 0.22 THz, exceeding the CMOS device cutoff frequency of f_T. The proposed architecture suppresses undesired 2nd and odd harmonics and boosts the fourth-order harmonic (0.87 THz), which radiates through an on-chip patch antenna. The THz oscillator´s output spectrum is profiled by using a Michelson interferometer. The oscillator circuit consumes 12 mA from a 1.4 V supply and occupies a 0.045 mm2 die area in a 65 nm CMOS technology.

Keywords

CMOS integrated circuits; LC circuits; field effect MIMIC; microstrip antennas; millimetre wave antennas; millimetre wave oscillators; negative resistance circuits; terahertz wave generation; CMOS terahertz generator; CMOS terahertz oscillator; frequency 0.87 THz; frequency selective negative resistance tank; harmonic suppression; on chip patch antenna; size 65 nm; voltage 1.4 V; CMOS integrated circuits; CMOS technology; Harmonic analysis; Impedance; Oscillators; Resistance; Resonant frequency; CMOS; interferometer; oscillator; resonant tank; terahertz (THz);

fLanguage

English

Journal_Title

Terahertz Science and Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-342X

Type

jour

DOI

10.1109/TTHZ.2011.2181922

Filename

6151215