DocumentCode :
1446739
Title :
An embedded 240-mW 10-b 50-MS/s CMOS ADC in 1-mm2
Author :
Bult, Klaas ; Buchwald, Aaron
Author_Institution :
Broadcom Corp., Irvine, CA, USA
Volume :
32
Issue :
12
fYear :
1997
fDate :
12/1/1997 12:00:00 AM
Firstpage :
1887
Lastpage :
1895
Abstract :
A distributed-gain preamplifier uses averaging to improve resolution by 4 b in differential nonlinearity (DNL) and 2 b in integral nonlinearity (INL) in a flash analog-to-digital converter (ADC). Fabricated in a 0.5-μm, triple-metal, single-poly CMOS process, the circuit measures 1.4 mm×1.4 mm including a bandgap and a sample-and-hold (SH), while the ADC itself occupies 1-mm2. At a conversion rate of 50-MS/s the ADC dissipates 170 mW, the SH dissipates 70 mW, and the untrimmed ADC-plus-SH exhibits 54 dB S/(N+D) with a 12-MHz 90% full-scale input
Keywords :
CMOS integrated circuits; analogue-digital conversion; crosstalk; distributed amplifiers; preamplifiers; sample and hold circuits; 0.5 micron; 10 bit; 12 MHz; 240 mW; CMOS ADC; averaging; conversion rate; differential nonlinearity; distributed-gain preamplifier; flash analog-to-digital converter; full-scale input; integral nonlinearity; sample-and-hold circuit; triple-metal single-poly CMOS process; untrimmed ADC-plus-SH; Analog-digital conversion; CMOS analog integrated circuits; CMOS process; Clocks; Crosstalk; Distributed amplifiers; Photonic band gap; Preamplifiers; Resistors; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.643647
Filename :
643647
Link To Document :
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