Title :
A 1-GSample/s 10-b full Nyquist silicon bipolar Track&Hold IC
Author :
Baumheinrich, Thorsten ; Prégardier, Bernd ; Langmann, Ulrich
Author_Institution :
Ruhr-Univ., Bochum, Germany
fDate :
12/1/1997 12:00:00 AM
Abstract :
This article gives a detailed presentation of an all-npn silicon bipolar Track&Hold IC for 10-b operation up to 1 GSample/s under full Nyquist conditions. Circuit techniques were implemented to reduce the pedestal, hold-mode feedthrough, and droop errors. An experimental Track&Hold IC was fabricated in a 25-GHz-fT, 0.4-μm-emitter-width single-poly base silicon bipolar production technology. Each of the Track&Hold circuits in this IC consists of 103 active devices and consumes 490 mW from a single supply voltage, including bandgap-references and input buffers
Keywords :
analogue processing circuits; analogue-digital conversion; bipolar analogue integrated circuits; circuit optimisation; error compensation; harmonic distortion; integrated circuit measurement; sample and hold circuits; signal reconstruction; signal sampling; 0.4 mum; 1 GSample/s; 25 GHz; 490 mW; A/D conversion; Si; all-npn Si bipolar track/hold IC; bandgap-references; circuit techniques; droop compensation; emitter width; full Nyquist conditions; hold-mode feedthrough errors; input buffers; nonlinear distortion; pedestal compensation; power consumption; single-poly base Si bipolar production technology; total harmonic distortion; Bandwidth; Bipolar integrated circuits; Distortion measurement; Frequency; Integrated circuit measurements; Linearity; Production; Silicon; Switches; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
