DocumentCode
1447133
Title
480 GHz oscillator with an InP Gunn device
Author
Eisele, H.
Author_Institution
Inst. of Microwaves & Photonics, Univ. of Leeds, Leeds, UK
Volume
46
Issue
6
fYear
2010
Firstpage
422
Lastpage
423
Abstract
An InP Gunn device with a graded doping profile was evaluated for third-harmonic power extraction around 480 GHz. The oscillator used the configuration of a WR-6 waveguide cavity for the InP Gunn device, two back-to-back waveguide transitions, WR ?? 3 1.5 and WR ?? 1.7 3, to block fundamental and second-harmonic frequencies, and WR-6 waveguide spacers to optimise the location of the reactive termination at the fundamental frequency. With 350 ??m-thick spacers, the oscillator yielded an RF output power of more than 85 ??W at 479.01 GHz.
Keywords
Gunn oscillators; III-V semiconductors; doping profiles; indium compounds; semiconductor doping; Gunn device; back-to-back waveguide transitions; frequency 479.01 GHz; frequency 480 GHz; graded doping profile; oscillator; third-harmonic power extraction; waveguide cavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.3362
Filename
5434623
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