Title :
Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes
Author :
Han, D.P. ; Shim, J.I. ; Shin, Dong Sik
Author_Institution :
Dept. of Electr. & Comput. Sci. Eng., Hanyang Univ., Ansan, South Korea
Abstract :
The relationship between the thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes (LEDs) is demonstrated. By using a three-dimensional electrical circuit model and experimentally measured thermal and luminance images of the LED chips, it is shown that thermal and luminance distributions have close correlation and that uniform current density is essential to improve the thermal and luminance properties of LED chips.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; GaN-InGaN; LED chips; light-emitting diodes; luminance distribution; thermal distribution; three-dimensional electrical circuit model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2416
