Title :
Room temperature λ ~ 3.3 μm InP-based inGaAs/AIAs(Sb) quantum cascade lasers
Author :
Zhang, S.Y. ; Revin, D.G. ; Commin, J.P. ; Kennedy, Krista ; Krysa, A.B. ; Cockburn, J.W.
Author_Institution :
EPSRC Nat. Centre for III-V Technol., Univ. of Sheffield, Sheffield, UK
Abstract :
Room temperature strain-compensated In0.7Ga0.3As/AlAs(Sb)/InP quantum cascade lasers operating at λ ~ 3.3 μm are reported. 20 μm wide- and 1.5 mm-long devices with as-cleaved facets deliver more than 1 W peak optical power per facet at 300 K. A detailed comparison of the device characteristics for the lasers fabricated from various parts of the 2-inch wafer has been performed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum cascade lasers; InGaAs-AlAsSb-InP; as-cleaved facets; quantum cascade lasers; room temperature; size 1.5 mm; size 20 mum; strain compensation; temperature 293 K to 298 K; temperature 300 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.0202
