AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability

An AlGaN/GaN lateral field-effect rectifier with intrinsic ON-state current limiting capability is demonstrated by adding a Schottky contact metal (length of L_D) beyond the ohmic contact region at the cathode electrode. The onset of the current limiting function is self-activated when the voltage drop across the two-dimensional gas (2DEG) channel under the Schottky contact reaches the pinch-off voltage of the as-grown AlGaN/GaN heterojunction. With L_D = 2 ??m and a drift region length of 7 ??m, the proposed lateral rectifier exhibited an ON-state current that was self-limited at 1.56 kA/cm², while achieving a reverse breakdown voltage of 347 V at a lmA/mm leakage current.