A novel trench-injector power device with low ON resistance and high switching speed

Author

Liu, David K Y ; Plummer, James D.

Author_Institution

Center for Integrated Circuits, Stanford Univ., CA, USA

Volume

9

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

321

Lastpage

323

Abstract

A power MOSFET device structure that has been developed to optimize the tradeoff between ON resistance and switching speed is discussed. The device structure features a trench injector that injects a controlled quantity of minority carriers into the drift path of the MOSFET current to modulate the conductivity of the device during the ON state. The conductivity-modulated MOSFET device (CMDMOS) has been fabricated and characterized. The device structure has demonstrated low ON resistance and high switching speed. It can be implemented along with logic circuitry to allow programmable electrical control of the switching-speed/ON-resistance tradeoff.<>

Keywords

insulated gate field effect transistors; minority carriers; power transistors; CMDMOS; ON resistance; conductivity; conductivity-modulated MOSFET device; drift path; logic circuitry; minority carriers; power MOSFET device structure; programmable electrical control; switching speed; trench-injector power device; Conductivity; Electric resistance; Electrons; Epitaxial layers; Logic circuits; Logic devices; MOSFET circuits; Power MOSFET; Programmable control; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.731

Filename

731