Title :
Fabrication and testing of solution-processed carbon nanotube thin film transistor
Author :
Xun Yi ; Liang Fang ; Yaqing Chi ; Bingcai Sui
Author_Institution :
State Key Lab. of High Performance Comput., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
We described fabrication and testing of solution-processed SWCNT TFTs. A back-gated TFT test structure was fabricated by drop-coating SWCNT solution on SiO2 surface with Au electrodes. Output characteristic and switching characteristic were measured and analyzed. Over 4 decades´ on/off ratio was obtained by using drop-coating at room temperature without any further optimization. Although we use a back-gated test structure, gate leak current was estimated at the level of picoampere. The resultant mobility level was 2×10-3 cm2 V-1s-1, which is potential for future applications.
Keywords :
carbon nanotube field effect transistors; electrochemical electrodes; gold; leakage currents; protective coatings; thin film transistors; Au; Au electrodes; C; SWCNT TFT; SiO2; back-gated TFT test structure; back-gated test structure; carbon nanotube thin film transistor; drop coating; drop-coating SWCNT solution; gate leak current; resultant mobility level; temperature 293 K to 298 K; Electrodes; Equations; Logic gates; Semiconductor device measurement; Switches; Thin film transistors; Threshold voltage; Carbon Nanotube; Gate Leakage; Solution Process; Thin Film Transistor;
Conference_Titel :
Information Science, Electronics and Electrical Engineering (ISEEE), 2014 International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4799-3196-5
DOI :
10.1109/InfoSEEE.2014.6947855