DocumentCode
1447648
Title
Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide
Author
Lee, Jack ; Hegarty, Chris ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
9
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
324
Lastpage
327
Abstract
The electrical characteristics of MOSFETs and MOS capacitors utilizing thin (80-230 AA) low-pressure chemical-vapor-deposited (LPCVD) oxide films deposited at 12 AA/min are presented. MOSFETs using CVD oxides show good electrical characteristics with 70-90% of the surface mobility of conventional MOSFETs. The CVD oxides exhibit the same low leakage current and high breakdown fields as the thermal oxides, and significantly lower trapping and trap generation rates than thermally grown oxides. Interface state densities of >
Keywords
CVD coatings; annealing; electron traps; insulated gate field effect transistors; LPCVD; MOS capacitors; MOSFETs; annealing; breakdown fields; dielectrics; electrical characteristics; leakage current; oxide films; surface mobility; trap generation rates; trapping; Annealing; Chemical vapor deposition; Dielectric devices; Electric breakdown; Electric variables; Interface states; Leakage current; MOS capacitors; MOS devices; MOSFETs;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.732
Filename
732
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