DocumentCode :
1447679
Title :
Nonlinear phenomena in semiconductor photoelectrochemistry
Author :
Dusco, C. ; Nagy, Gabor ; Schiller, Robert
Author_Institution :
Central Res. Inst. for Phys., Budapest, Hungary
Volume :
23
Issue :
4
fYear :
1988
fDate :
8/1/1988 12:00:00 AM
Firstpage :
541
Lastpage :
544
Abstract :
By investigating the photocurrent at the interfaces of different aqueous solutions and of B6As or tungsten bronzes, it is shown that whereas the kinetics is defined by solid-state processes, i.e. light absorption, charge-carrier transport, and recombination, the magnitude of the current depends on the nature and concentration of charge scavengers dissolved in water. The observed square-root dependence of steady-state photocurrent on light intensity is described in terms of second-order recombination in the solid phase. The effect of the liquid-phase composition proves that atomic hydrogen is the active intermediary at the illuminated interface between tungsten bronze and aqueous solution.
Keywords :
boron compounds; electron-hole recombination; hydrogen compounds; photoconductivity; semiconductor materials; semiconductor-electrolyte boundaries; B6As; HyNaxWO3; HyWO3; aqueous solutions; charge scavengers; charge-carrier transport; current kinetics; electrolyte interface; illuminated interface; light absorption; light intensity; liquid-phase composition; photocurrent; recombination; semiconductor photoelectrochemistry; tungsten bronzes; Cathodes; Charge carriers; Electrodes; Electrons; Kinetic theory; Liquids; Photoconductivity; Radiative recombination; Solid state circuits; Tungsten;
fLanguage :
English
Journal_Title :
Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9367
Type :
jour
DOI :
10.1109/14.7323
Filename :
7323
Link To Document :
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