A 1/4-inch 330 K square pixel progressive scan CMOS active pixel image sensor

Author

Iida, Yoshinori ; Oba, Eiji ; Mabuchi, Keiji ; Nakamura, Nobuo ; Miura, Hiroki

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

Volume

32

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2042

Lastpage

2047

Abstract

In this paper, three pixel structures have been studied as candidates to realize high density CMOS active pixel sensors. A novel cell structure, the “I-shaped” cell, in which the active regions are formed along a straight line, has been proposed for high-packing density devices. The “I-shaped” cells can realize minimum cell area of 16F², 14F², and 14F ² (F: design rule) for three-transistor-type, two-transistor-type, and one-transistor-type pixels, respectively. A 1/4-inch format progressive scan CMOS active pixel sensor with 640 (H)×480 (V) pixels has been fabricated using a 0.6-μm CMOS process. The sensor operates with 5.0 V single power supply, and power consumption is below 30 mW

Keywords

CMOS analogue integrated circuits; elemental semiconductors; image sensors; photodiodes; silicon; 0.6 micron; 307200 pixel; 480 pixel; 5.0 V; 640 pixel; CMOS active pixel image sensor; I-shaped cell; Si; cell area; cell structure; high-packing-density devices; one-transistor-type pixels; power consumption; progressive scan; square pixel; three-transistor-type pixels; two-transistor-type pixels; CMOS image sensors; CMOS process; Capacitors; Circuits; Energy consumption; Image sensors; Photodiodes; Pixel; Power supplies; Pulse amplifiers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.643662

Filename

643662