Title :
A Compact W-Band CMOS Power Amplifier With Gain Boosting and Short-Circuited Stub Matching for High Power and High Efficiency Operation
Author :
Chan, Doris A. ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois Urbana-Champaign, Urbana, IL, USA
Abstract :
Using cascode cell, inductance gain boosting and source degeneration techniques in 90 nm CMOS process, a two-stage power amplifier operating at 80 GHz with a minimum chip area of 0.35 mm2 demonstrates gain of 18 dB, linear output power of 10.8 dBm, saturated power of 13.3 dBm, and PAE greater than 11.8% when the amplifier is biased at Vd = 3 V and Vg = 1 V.
Keywords :
CMOS integrated circuits; inductance; power amplifiers; cascode cell; compact W-band CMOS power amplifier; frequency 80 GHz; gain 18 dB; high efficiency operation; high power operation; inductance gain boosting; short-circuited stub matching; size 90 nm; source degeneration techniques; Boosting; CMOS integrated circuits; Coplanar waveguides; Gain; Logic gates; Power generation; Semiconductor device measurement; CMOS; coplanar waveguide (CPW); millimeter-wave; power amplifier (PA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2097584
