Title :
Concurrent Hex-Band GaN Power Amplifier for Wireless Communication Systems
Author :
Fagotti, Rossano ; Cidronali, Alessandro ; Manes, Gianfranco
Author_Institution :
Dept. of Electron. & Telecommun., Univ. of Florence, Florence, Italy
Abstract :
In this letter, we propose a novel multi-section transmission line matching technique applied to the design of a concurrent hex-band HEMT GaN power amplifier (PA). The PA has been designed for a concurrent operation at 0.9, 1.8, 2.5, 3.5, 5.2, and 5.8 GHz. Experimental results have shown minimum and maximum saturated output power levels of 33 dBm and 36.7 dBm respectively over the different frequency bands, with the power added efficiency (PAE) ranging from a minimum of 20% to a maximum of 49%. A detailed comparison between simulation and experimental results data has also been reported.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; radiocommunication; transmission lines; GaN; concurrent hex-band HEMT GaN power amplifier; frequency 0.9 GHz; frequency 1.8 GHz; frequency 2.5 GHz; frequency 3.5 GHz; frequency 5.2 GHz; frequency 5.8 GHz; multi-section transmission line matching; power added efficiency; wireless communication systems; Frequency measurement; Gain measurement; Gallium nitride; Impedance; Impedance matching; Power generation; Prototypes; GaN PA; multi-band PA; multi-band matching;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2098859
