• DocumentCode
    1447740
  • Title

    Effect of angle dependent attempt frequency on Arrhenius-Neel thermal decay in thin film media

  • Author

    Igarashi, M. ; Akagi, F. ; Yoshida, K. ; Nakatani, Y.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    36
  • Issue
    5
  • fYear
    2000
  • fDate
    9/1/2000 12:00:00 AM
  • Firstpage
    2459
  • Lastpage
    2461
  • Abstract
    The angle dependence of the attempt frequency f0 has been determined by assuming isotropic thermal excitation in the anisotropic free energy around the easy axis of a single-domain particle. The relationship between the logarithmic time and the time-dependent remanence coercivity Hcr was estimated. The acquired equation agrees sell with the numerical calculation of the Langevin equation. The conventional formula do not give the correct relationship between Hcr and Kβ(=Kv/kT) because the exponent of Kβ depends on Kβ. The estimated Kβ from Sharrock´s formula is 15% larger at Kβ of 100 and 5% smaller at K β of 50. Bertram´s formula is effective at Kβ of 100 but brings 7% smaller estimation at Kβ of 50
  • Keywords
    coercive force; free energy; magnetic anisotropy; magnetic particles; magnetic recording; magnetic thin films; remanence; Arrhenius-Neel thermal decay; Bertram formula; Langevin equation; Sharrock formula; angle dependence; anisotropic free energy; attempt frequency; easy axis; magnetic recording; magnetization; single-domain particle; thermal fluctuations; thin film medium; time dependent remanence coercivity; Anisotropic magnetoresistance; Coercive force; Equations; Fluctuations; Frequency; Magnetic anisotropy; Magnetization; Perpendicular magnetic anisotropy; Remanence; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.908465
  • Filename
    908465