Title :
A 155-GHz monolithic low-noise amplifier
Author :
Wang, Huei ; Lai, Richard ; Kok, Yon-Lin ; Huang, Tian-Wei ; Aust, Michael V. ; Chen, Yaochung C. ; Siegel, Peter H. ; Gaier, Todd ; Dengler, Robert J. ; Allen, Barry R.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
fDate :
11/1/1998 12:00:00 AM
Abstract :
This paper presents the design, fabrication, and test results of a three-stage 155-GHz monolithic low-noise amplifier (LNA) fabricated with the 0.1-μm pseudomorphic (PM) InAlAs-InGaAs-InP HEMT technology. With this amplifier in a test fixture, a small-signal gain of 12 dB was measured at 155 GHz, and more than 10-dB gain from 151 to 156 GHz. When the amplifier was biased for a low noise figure (NF), an NF of 5.1 dB with an associated gain of 10.1 dB was achieved at 155 GHz. All the results above are referred to the monolithic millimetre-wave integrated circuit (MIMIC) chip with the input and output waveguide-to-microstrip line transition losses corrected
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; equivalent circuits; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 10.1 to 12 dB; 151 to 156 GHz; 5.1 dB; EHF; InAlAs-InGaAs-InP; MIMIC chip; MM-wave PHEMT; fabrication; low-noise amplifier; monolithic LNA; monolithic millimetre-wave IC; pseudomorphic HEMT technology; three-stage LNA design; transition losses correction; waveguide-to-microstrip line transition; Fabrication; Fixtures; Gain measurement; HEMTs; Low-noise amplifiers; Monolithic integrated circuits; Noise figure; Noise measurement; Testing; Waveguide transitions;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
