A new extraction method for the two-parameter FET temperature noise model

Author

Garcia, Mikael ; Stenarson, Jörgen ; Yhland, Klas ; Zirath, Herbert ; Angelov, Ilcho

Author_Institution

Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

46

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

1679

Lastpage

1685

Abstract

This paper presents a direct extraction method for the associated noise temperatures T_d and T_g in the field-effect transistor (FET) temperature noise model. The method is related to nodal analysis of circuits. T_d and T_g are extracted from the small-signal model parameters and the noise parameters of the device. It is also theoretically shown that there exist source admittances that cancel the thermal noise contribution at the output from either T_d or T_g in the model. Finally, a commercially available GaAs pseudomorphic high electron-mobility transistor (pHEMT) is measured and modeled for a wide range of bias points. Comparisons between measured and modeled noise parameters are presented in the 2-26 GHz frequency range

Keywords

electric admittance; equivalent circuits; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; 2 to 26 GHz; GaAs; SHF; bias points; direct extraction method; field-effect transistor; high electron-mobility transistor; noise temperatures; pHEMT; pseudomorphic HEMT; small-signal model parameters; source admittances; temperature noise model; thermal noise contribution; two-parameter FET model; Admittance; Circuit noise; FETs; Frequency measurement; Gallium arsenide; Microwave technology; Noise cancellation; Noise measurement; PHEMTs; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.734558

Filename

734558