Title :
Influence of Elastic and Inelastic Electron–Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs
Author :
Akhavan, Nima Dehdashti ; Afzalian, Aryan ; Kranti, Abhinav ; Ferain, Isabelle ; Lee, Chi-Woo ; Yan, Ran ; Razavi, Pedram ; Yu, Ran ; Colinge, Jean-Pierre
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
fDate :
4/1/2011 12:00:00 AM
Abstract :
This paper presents the effect of different elastic acoustic and inelastic optical electron-phonon interaction mechanisms on quantum transport and electrical characteristics of multigate silicon nanowire FETs. A 3-D quantum-mechanical device simulator based on the nonequilibrium Green´s function formalism in the uncoupled mode space that can handle electron-phonon interactions has been developed to extract the physical parameters of the devices. The electron-phonon scattering has been treated by using the self-consistent Born approximation and deformation potential theory. Utilizing this simulator, we show that interaction of the carriers with optical phonons redistributes the energy and momentum of electrons in the transport direction, depending on the energy of the phonon. Optical phonons cause either a reduction of the electron density or an increase of the electron concentration in the channel region, depending on the phonon energy and coupling strength. Finally, we show that the critical length for carriers to get backscattered in the silicon nanowire is directly proportional to the phonon energy.
Keywords :
Green´s function methods; MOSFET; electron-phonon interactions; elemental semiconductors; nanowires; silicon; 3D quantum-mechanical device simulator; Si; coupling strength; deformation potential theory; elastic optical electron-phonon interaction mechanisms; electron concentration; electron density; electron-phonon scattering; inelastic optical electron-phonon interaction mechanisms; multigate nanowire MOSFET; nonequilibrium Green function formalism; phonon energy; quantum transport; self-consistent Born approximation; Backscatter; Charge carrier processes; Electric potential; Optical scattering; Phonons; Silicon; Device simulation; inelastic optical phonons; multigate nanowire transistor; nonequilibrium Green´s function (NEGF); quantum transport;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2107521