DocumentCode
1448281
Title
Microwave noise parameters of pseudomorphic GaInAs HEMTs under optical illumination
Author
Escotte, L. ; Grenier, K. ; Tartarin, J.G. ; Graffeuil, J.
Author_Institution
Univ. Paul Sabatier, Toulouse, France
Volume
46
Issue
11
fYear
1998
fDate
11/1/1998 12:00:00 AM
Firstpage
1788
Lastpage
1789
Abstract
The microwave behavior of pseudomorphic high electron-mobility transistors (pHEMTs) under optical illumination is investigated in this paper. The influence of light on the small-signal equivalent circuit is derived from scattering-parameter measurements. The evolution of the noise parameters versus gate-to-source voltage and their sensibility to illumination is also demonstrated
Keywords
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device noise; GaInAs; diffusion noise; gate-to-source voltage; microwave noise parameters; optical control; optical illumination; pseudomorphic HEMT; scattering-parameter measurements; small-signal equivalent circuit; Circuit noise; Equivalent circuits; HEMTs; Lighting; MODFETs; Microwave transistors; Optical noise; Optical scattering; Optical sensors; PHEMTs;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.734581
Filename
734581
Link To Document