Title :
Recent developments in magnetic tunnel junction MRAM
Author :
Tehrani, S. ; Engel, B. ; Slaughter, J.M. ; Chen, E. ; DeHerrera, M. ; Durlam, M. ; Naji, P. ; Whig, R. ; Janesky, J. ; Calder, J.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fDate :
9/1/2000 12:00:00 AM
Abstract :
We summarize our progress on Magnetoresistive Random Access Memory (MRAM) based on Magnetic Tunnel Junctions (MTJ). We have demonstrated MTJ material in the 1-1000 kΩ-μm2 range with MR values above 40%. The switching characteristics are mainly governed by the magnetic shape anisotropy that arises from the element boundaries. The switching repeatability, as well as hard axis selectability, are shown to be dependent on both shape and aspect ratio. MTJ memory elements were successfully integrated with 0.6 μm CMOS technology, achieving read and program address access times of 14 ns in a 256×2 MRAM
Keywords :
CMOS integrated circuits; magnetic anisotropy; magnetic switching; magnetoresistive devices; random-access storage; tunnelling; 0.6 mum; 14 ns; CMOS technology; MTJ memory elements; aspect ratio; element boundaries; hard axis selectability; magnetic shape anisotropy; magnetic tunnel junction MRAM; magnetoresistive random access memory; program address access time; read time; switching characteristics; switching repeatability; CMOS technology; Magnetic anisotropy; Magnetic materials; Magnetic separation; Magnetic switching; Magnetic tunneling; Perpendicular magnetic anisotropy; Random access memory; Shape; Tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
