DocumentCode
1448569
Title
Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme
Author
Matsuyama, K. ; Murashima, N. ; Higashidani, M. ; Nozaki, Y.
Author_Institution
Dept. of Electron. Device Eng., Kyushu Univ., Fukuoka, Japan
Volume
36
Issue
5
fYear
2000
fDate
9/1/2000 12:00:00 AM
Firstpage
2767
Lastpage
2769
Abstract
Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current I w markedly increases with the additional assist current Ia. Threshold value of I, required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region
Keywords
cobalt; copper; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic domains; magnetic recording; magnetisation; nickel alloys; random-access storage; spin valves; 0.4 mum; 30 ns; NiFe-Co-Cu-Co; NiFe/Co/Cu/Co; assist conductors; cooperative nucleation; current coincident scheme; current induced MR change; domain; domain nucleation; fast relaxation time; magnetization process; orthogonal two-layer conductors; phase difference; selective writing; spin valve strip; threshold; write conductors; Conducting materials; Conductors; Iron; Magnetic domains; Magnetic switching; Magnetization; Space vector pulse width modulation; Spin valves; Strips; Writing;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.908584
Filename
908584
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