Title :
Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure—An Electrostatic Approach
Author :
Boyer, Ludovic ; Fruchier, Olivier ; Notingher, Petru, Jr. ; Agnel, Serge ; Toureille, Alain ; Rousset, Bernard ; Sanchez, Jean-Louis
Author_Institution :
Inst. d´´Electron. du Sud, Univ. of Montpellier 2, Montpellier, France
Abstract :
The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure while crossed by a thermal wave is addressed in this paper, in view of analyzing the data obtained by TSM in conjunction with capacitance-voltage measurements. Applications to MOS samples with 120-nm-thick oxides are presented.
Keywords :
MIS devices; electrostatic devices; MOS structure; capacitance-voltage measurements; electrostatic approach; metal-oxide-semiconductor structure; nondestructive technique; thermal waves; thermal-step method; Electric charge; metal–oxide–semiconductor (MOS); oxide; reliability; space charge; thermal-step method (TSM);
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2010.2045211
