DocumentCode
1448665
Title
Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure—An Electrostatic Approach
Author
Boyer, Ludovic ; Fruchier, Olivier ; Notingher, Petru, Jr. ; Agnel, Serge ; Toureille, Alain ; Rousset, Bernard ; Sanchez, Jean-Louis
Author_Institution
Inst. d´´Electron. du Sud, Univ. of Montpellier 2, Montpellier, France
Volume
46
Issue
3
fYear
2010
Firstpage
1144
Lastpage
1150
Abstract
The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure while crossed by a thermal wave is addressed in this paper, in view of analyzing the data obtained by TSM in conjunction with capacitance-voltage measurements. Applications to MOS samples with 120-nm-thick oxides are presented.
Keywords
MIS devices; electrostatic devices; MOS structure; capacitance-voltage measurements; electrostatic approach; metal-oxide-semiconductor structure; nondestructive technique; thermal waves; thermal-step method; Electric charge; metal–oxide–semiconductor (MOS); oxide; reliability; space charge; thermal-step method (TSM);
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2010.2045211
Filename
5437222
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