Title :
Low-Frequency Noise in Vertical InAs Nanowire FETs
Author :
Persson, Karl-Magnus ; Lind, Erik ; Dey, Anil W. ; Thelander, Claes ; Sjoland, Henrik ; Wernersson, Lars-Erik
Author_Institution :
Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
fDate :
5/1/2010 12:00:00 AM
Abstract :
This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-?? dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power SI /Id 2 measures 7.3 ?? 10-7 Hz-1. Moreover, the material-dependent Hooge´s parameter at room temperature is estimated to be 4.2 ?? 10-3.
Keywords :
MOSFET; nanowires; InAs; average normalized transconductance; low-frequency noise measurements; metal-oxide-semiconductor field effect transistors; vertical nanowire MOSFET; FET; InAs; flicker noise; nanowire (NW);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2043637
