• DocumentCode
    1448770
  • Title

    Low-Frequency Noise in Vertical InAs Nanowire FETs

  • Author

    Persson, Karl-Magnus ; Lind, Erik ; Dey, Anil W. ; Thelander, Claes ; Sjoland, Henrik ; Wernersson, Lars-Erik

  • Author_Institution
    Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
  • Volume
    31
  • Issue
    5
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    428
  • Lastpage
    430
  • Abstract
    This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-?? dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power SI /Id 2 measures 7.3 ?? 10-7 Hz-1. Moreover, the material-dependent Hooge´s parameter at room temperature is estimated to be 4.2 ?? 10-3.
  • Keywords
    MOSFET; nanowires; InAs; average normalized transconductance; low-frequency noise measurements; metal-oxide-semiconductor field effect transistors; vertical nanowire MOSFET; FET; InAs; flicker noise; nanowire (NW);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2043637
  • Filename
    5437236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1448770