DocumentCode :
1448782
Title :
A single-chip Zero-IF down-converter in SiGe:C BiCMOS technology for WLAN 802.11a
Author :
Jato, Y. ; Herrera, A.
Author_Institution :
Dept. de Ing. de Comun., Univ. de Cantabria, Santander, Spain
Volume :
7
Issue :
2
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
127
Lastpage :
132
Abstract :
This paper presents the contamination levels, obtained applying the Equivalent Salt Deposit Density ESDD methodology in nine distribution circuits and five substations, belonging to ELECTRICARIBE S.A. E.S.P., and located in the north area of Barranquilla, the main Colombian Atlantic Ocean port. The paper shows the different study stages such as the sampling places selection and configuration, the ESDD measurement procedures and the results evaluation applying statistical techniques.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; statistical analysis; wireless LAN; BiCMOS technology; ESDD measurement; SiGe:C; WLAN; equivalent salt deposit density; sampling places; single-chip; statistical techniques; zero-IF down-converter; BiCMOS integrated circuits; Contamination; Image converters; Insulation; Marine technology; Oceans; Sampling methods; Sea measurements; Substations; Wireless LAN; Direct conversion; LNA; SiGe; WLAN; mixer;
fLanguage :
English
Journal_Title :
Latin America Transactions, IEEE (Revista IEEE America Latina)
Publisher :
ieee
ISSN :
1548-0992
Type :
jour
DOI :
10.1109/TLA.2009.5256819
Filename :
5256819
Link To Document :
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