Title :
A single-chip Zero-IF down-converter in SiGe:C BiCMOS technology for WLAN 802.11a
Author :
Jato, Y. ; Herrera, A.
Author_Institution :
Dept. de Ing. de Comun., Univ. de Cantabria, Santander, Spain
fDate :
6/1/2009 12:00:00 AM
Abstract :
This paper presents the contamination levels, obtained applying the Equivalent Salt Deposit Density ESDD methodology in nine distribution circuits and five substations, belonging to ELECTRICARIBE S.A. E.S.P., and located in the north area of Barranquilla, the main Colombian Atlantic Ocean port. The paper shows the different study stages such as the sampling places selection and configuration, the ESDD measurement procedures and the results evaluation applying statistical techniques.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; statistical analysis; wireless LAN; BiCMOS technology; ESDD measurement; SiGe:C; WLAN; equivalent salt deposit density; sampling places; single-chip; statistical techniques; zero-IF down-converter; BiCMOS integrated circuits; Contamination; Image converters; Insulation; Marine technology; Oceans; Sampling methods; Sea measurements; Substations; Wireless LAN; Direct conversion; LNA; SiGe; WLAN; mixer;
Journal_Title :
Latin America Transactions, IEEE (Revista IEEE America Latina)
DOI :
10.1109/TLA.2009.5256819