DocumentCode
1448926
Title
An Activity-Triggered 95.3 dB DR
75.6 dB THD CMOS Imaging Sensor With Digital Calibration
Author
Yuan, Jie ; Chan, Ho Yeung ; Fung, Sheung Wai ; Liu, Bing
Author_Institution
Electron. & Comput. Eng. Dept., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume
44
Issue
10
fYear
2009
Firstpage
2834
Lastpage
2843
Abstract
Imaging sensors are being used as data acquisition systems in new biomedical applications. These applications require wide dynamic range (WDR), high linearity and high signal-to-noise ratio (SNR), which cannot be met simultaneously by existing CMOS imaging sensors. This paper introduces a new activity-triggered WDR CMOS imaging sensor with very low distortion. The new WDR pixel includes self-resetting circuits to partially quantize the photocurrent in the pixel. The pixel residual analog voltage is further quantized by a low-resolution column-wise ADC. The ADC code and the partially quantized pixel codes are processed by column-wise digital circuits to form WDR images. Calibration circuits are included in the pixel to improve the pixel linearity by a digital calibration method, which requires low calibration overhead. Current-mode difference circuits are included in the pixel to detect activities within the scene so that the imaging sensor captures high quality images only for scenes with intense activity. A proof-of-concept 32 times 32 imaging sensor is fabricated in a 0.35 mum CMOS process. The fill factor of the new pixel is 27%. Silicon measurements show that the new imaging sensor can achieve 95.3 dB dynamic range with low distortion of -75.6 dB after calibration. The maximum SNR of the sensor is 74.5 dB. The imaging sensor runs at frame rate up to 15 Hz.
Keywords
CMOS image sensors; analogue-digital conversion; biomedical communication; data acquisition; ADC code; THD CMOS imaging sensor; biomedical applications; column-wise digital circuits; current-mode difference circuits; data acquisition systems; digital calibration; pixel residual analog voltage; self-resetting circuits; signal-to-noise ratio; size 0.35 mum; wide dynamic range; Biomedical imaging; Biosensors; CMOS image sensors; Calibration; Circuits; Dynamic range; Image sensors; Layout; Linearity; Pixel; Activity-triggered detection; CMOS imaging sensor; difference image; digital calibration; high linearity; wide dynamic range;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2009.2027929
Filename
5256974
Link To Document