DocumentCode :
1448950
Title :
High-Efficiency WCDMA Envelope Tracking Base-Station Amplifier Implemented With GaAs HVHBTs
Author :
Jeong, Jinseong ; Kimball, Donald F. ; Kwak, Myoungbo ; Draxler, Paul ; Hsia, Chin ; Steinbeiser, Craig ; Landon, Thomas ; Krutko, Oleh ; Larson, Lawrence E. ; Asbeck, Peter M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, MD, USA
Volume :
44
Issue :
10
fYear :
2009
Firstpage :
2629
Lastpage :
2639
Abstract :
A record high-performance GaAs high-voltage HBT (HVHBT)-based WCDMA base-station power amplifier is presented, which uses an envelope tracking bias system to achieve high efficiency and linearity. A wideband envelope amplifier provides dynamic collector supply biasing to the RF stage. A digital pre-distortion technique is employed to satisfy the linearity specifications of WCDMA. The measured overall power-added efficiency reached 58% with a normalized root-mean-square (RMS) error of 2.9% and an adjacent channel leakage ratio (ACLR) of -49 dBc at 5-MHz offset at an average output power of 42 W and a gain of 10.3 dB for a single carrier WCDMA signal with 6.6-dB peak-to-average power ratio. A memory mitigation algorithm further improves the linearity, resulting in an ACLR of -70 dBc and a normalized RMS error of 0.3%. Measurements were made to quantify separately the efficiency contributions of the HVHBT-based RF stage, and of the envelope amplifier. The measurements show that the RF stage operates at collector efficiency above 85% over most of the instantaneous power range of the WCDMA signal. This remarkably high efficiency is the result of low ldquoon-resistancerdquo and low (and nearly voltage independent) output capacitance of the HVHBT.
Keywords :
code division multiple access; gallium arsenide; heterojunction bipolar transistors; mean square error methods; power amplifiers; GaAs; WCDMA envelope tracking base-station power amplifier; adjacent channel leakage ratio; digital predistortion technique; frequency 5 MHz; gain 10.3 dB; high-voltage HBT; memory mitigation algorithm; normalized root-mean-square error; wideband envelope amplifier; Broadband amplifiers; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearity; Multiaccess communication; Power measurement; Radio frequency; Radiofrequency amplifiers; Base-station power amplifier; GaAs HVHBT; WCDMA; WiMAX; digital pre-distortion; efficiency; envelope tracking; linearity; memory mitigation; peak-to-average power ratio;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2009.2026845
Filename :
5256978
Link To Document :
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