Title :
Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode
Author :
Chen, Wensuo ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
State Key Lab. of Electron. Thin Film & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
5/1/2010 12:00:00 AM
Abstract :
A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-off times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.
Keywords :
insulated gate bipolar transistors; power electronics; silicon-on-insulator; 3-D n-region-controlled anode; 3D anode structure; IGBT; electron extraction; insulated-gate bipolar transistor structure; negative-differential-resistance regime; power IC; silicon-on-insulator substrate; 3-D n-region-controlled anode; Forward drop; negative differential resistance (NDR); segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT); shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT); turn-off time;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2043638
