Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode

Author

Chen, Wensuo ; Zhang, Bo ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Film & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

467

Lastpage

469

Abstract

A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-off times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.

Keywords

insulated gate bipolar transistors; power electronics; silicon-on-insulator; 3-D n-region-controlled anode; 3D anode structure; IGBT; electron extraction; insulated-gate bipolar transistor structure; negative-differential-resistance regime; power IC; silicon-on-insulator substrate; 3-D n-region-controlled anode; Forward drop; negative differential resistance (NDR); segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT); shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT); turn-off time;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2043638

Filename

5437262