Enhanced Output Power of InGaN-Based Light-Emitting Diodes With AlGaN/GaN Two-Dimensional Electron Gas Structure

We demonstrate high-performance InGaN-based light-emitting diodes (LEDs) with tunneling-junction-induced 2-D electron gas (2DEG) at an AlGaN/GaN heterostructure, which is inserted in the middle of the P⁺-GaN contact layer of a conventional LED structure. The output power of a LED with a 2DEG insertion layer shows 17% enhancement compared to that of a conventional LED at 20 mA. This enhancement in output power for the LED with a 2DEG insertion layer could be attributed to both enhanced hole-injection efficiency and lateral current spreading by the presence of 2DEG at the AlGaN/GaN heterostructure.