• DocumentCode
    1449183
  • Title

    Variation Trained Drowsy Cache (VTD-Cache): A History Trained Variation Aware Drowsy Cache for Fine Grain Voltage Scaling

  • Author

    Sasan, Avesta ; Amiri, Kiarash ; Homayoun, Houman ; Eltawil, Ahmed M. ; Kurdahi, Fadi J.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA
  • Volume
    20
  • Issue
    4
  • fYear
    2012
  • fDate
    4/1/2012 12:00:00 AM
  • Firstpage
    630
  • Lastpage
    642
  • Abstract
    In this paper we present the “Variation Trained Drowsy Cache” (VTD-Cache) architecture. VTD-Cache allows for a significant reduction in power consumption while addressing reliability issues raised by memory cell process variability. By managing voltage scaling at a very fine granularity, each cache way can be sourced at a different voltage where the selection of voltage levels depends on both the vulnerability of the memory cells in that cache way to process variation and the likelihood of access to that cache location. After a short training period, the proposed architecture will micro-tune the cache, allowing significant power reduction with negligible increase in the number of misses. In addition, the proposed architecture actively monitors the access pattern and reconfigures the supply voltage setting to adapt to the execution pattern of the program. The novel and modular architecture of the VTD-Cache and its associated controller makes it easy to be implemented in memory compilers with a small area and power overhead. In a case study, the SimpleScalar simulation of the proposed 32 kB cache architecture reports over 57% reduction in power consumption over standard SPEC2000 integer benchmarks while incurring an area overhead of less than 4% and an execution time penalty smaller than 1%.
  • Keywords
    cache storage; integrated circuit reliability; low-power electronics; memory architecture; power aware computing; SPEC2000 integer benchmarks; SimpleScalar simulation; VTD-cache architecture; access pattern; circuit reliability; fine grain voltage scaling; history trained variation aware drowsy cache; memory cell process variability; memory cell vulnerability; memory compilers; power consumption reduction; program execution pattern; variation trained drowsy cache; Memory management; Microprocessors; Power demand; Radiation detectors; Random access memory; Reliability; Cache; drowsy cache; fault tolerance; leakage; low power; manufacturing defects; power efficient; process variation; static random access memory (SRAM); technology scaling; voltage scaling;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2011.2106523
  • Filename
    5712204