DocumentCode :
1449183
Title :
Variation Trained Drowsy Cache (VTD-Cache): A History Trained Variation Aware Drowsy Cache for Fine Grain Voltage Scaling
Author :
Sasan, Avesta ; Amiri, Kiarash ; Homayoun, Houman ; Eltawil, Ahmed M. ; Kurdahi, Fadi J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA
Volume :
20
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
630
Lastpage :
642
Abstract :
In this paper we present the “Variation Trained Drowsy Cache” (VTD-Cache) architecture. VTD-Cache allows for a significant reduction in power consumption while addressing reliability issues raised by memory cell process variability. By managing voltage scaling at a very fine granularity, each cache way can be sourced at a different voltage where the selection of voltage levels depends on both the vulnerability of the memory cells in that cache way to process variation and the likelihood of access to that cache location. After a short training period, the proposed architecture will micro-tune the cache, allowing significant power reduction with negligible increase in the number of misses. In addition, the proposed architecture actively monitors the access pattern and reconfigures the supply voltage setting to adapt to the execution pattern of the program. The novel and modular architecture of the VTD-Cache and its associated controller makes it easy to be implemented in memory compilers with a small area and power overhead. In a case study, the SimpleScalar simulation of the proposed 32 kB cache architecture reports over 57% reduction in power consumption over standard SPEC2000 integer benchmarks while incurring an area overhead of less than 4% and an execution time penalty smaller than 1%.
Keywords :
cache storage; integrated circuit reliability; low-power electronics; memory architecture; power aware computing; SPEC2000 integer benchmarks; SimpleScalar simulation; VTD-cache architecture; access pattern; circuit reliability; fine grain voltage scaling; history trained variation aware drowsy cache; memory cell process variability; memory cell vulnerability; memory compilers; power consumption reduction; program execution pattern; variation trained drowsy cache; Memory management; Microprocessors; Power demand; Radiation detectors; Random access memory; Reliability; Cache; drowsy cache; fault tolerance; leakage; low power; manufacturing defects; power efficient; process variation; static random access memory (SRAM); technology scaling; voltage scaling;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2011.2106523
Filename :
5712204
Link To Document :
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