New measurement-based technique for RF LDMOS nonlinear modeling

Author

Collantes, J.M. ; Raoux, J.J. ; Quere, R. ; Suárez, A.

Author_Institution

Dept. de Electr. y Electron., Pais Vasco Univ., Bilbao, Spain

Volume

8

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

345

Lastpage

347

Abstract

In this letter a new look-up table model is developed for the nonlinear modeling of radio frequency (RF) LDMOS transistors. The modeling technique is based on the use of approximation splines that are coupled to a pulsed I-V characterization setup. It provides a very fast modeling procedure, while avoiding the appearance of undesired ripples in the modeled functions. The technique has been applied to a RF LDMOS technology for L-band applications, obtaining excellent results in the prediction of both the small- and large-signal transistor responses. This technique is specially suitable for fast-evolution technologies

Keywords

MOSFET; UHF field effect transistors; UHF measurement; semiconductor device measurement; semiconductor device models; splines (mathematics); table lookup; L-band; RF LDMOS transistor; approximation spline; large-signal response; look-up table; measurement technique; nonlinear model; pulsed I-V characteristics; small-signal response; Helium; Interpolation; MOSFETs; Microwave technology; Microwave transistors; Power system modeling; Pulse measurements; Radio frequency; Spline; Table lookup;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.735416

Filename

735416