DocumentCode :
1449428
Title :
A novel self-aligned gate process for half-micrometer gate GaAs ICs using ECR-CVD
Author :
Shikata, Shin-Ichi ; Tsuchimoto, Jun-Ichi ; Hayashi, Hideki
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Volume :
37
Issue :
8
fYear :
1990
fDate :
8/1/1990 12:00:00 AM
Firstpage :
1800
Lastpage :
1803
Abstract :
A substitutional self-aligned gate MESFET process for the half-micrometer gate GaAs IC that employs techniques of sidewall formation and precise pattern reversal using ECR (electron cyclotron resonance) CVD (chemical vapor deposition) is discussed. A FET with 0.45-μm gate length showed high performance characteristics, such as a maximum transconductance of 440 mS/mm and a cutoff frequency of 39 GHz. This process has two advantages over conventional substitutional and refractory gate processes. First, it can incorporate an LDD (lightly doped drain) structure. Second, since the photoresist dummy gates are precisely reversed without using reactive ion etching (RIE) at all, the gate length is dependent only on lithography. The process was demonstrated by the preliminary fabrication of a 16 b×16 b multiplier with 50% yield. The process, with high-performance device characteristics, should fine broad applications in both half-micrometer gate level LSIs and analog ICs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; VLSI; chemical vapour deposition; digital integrated circuits; field effect integrated circuits; gallium arsenide; integrated circuit technology; multiplying circuits; ECR-CVD; GaAs; LDD structure; LSIs; analog ICs; chemical vapor deposition; cutoff frequency; electron cyclotron resonance; half-micrometer gate; performance characteristics; photoresist dummy gates; precise pattern reversal; self-aligned gate process; semiconductors; sidewall formation; substitutional self-aligned gate MESFET process; transconductance; Chemical vapor deposition; Cutoff frequency; Cyclotrons; Electrons; FETs; Gallium arsenide; MESFET integrated circuits; Optical refraction; Resonance; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.57129
Filename :
57129
Link To Document :
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