Title :
Optical and noise characteristics of amorphous Si/SiC superlattice reach-through avalanche photodiodes
Author :
Hong, Jyh-Wong ; Laih, Wuu-larng ; Chen, Yu-wen ; Fang, Yean-Kuan ; Chang, Chun-Yen ; Gong, Jeng
Author_Institution :
Semicond. & Syst. Lab., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
8/1/1990 12:00:00 AM
Abstract :
In order to improve the performance of the a(amorphous)-Si:H/SiC:H superlattice avalanche photodiode (APD), a-Si:H/SiC:H superlattice reach-through APDs (SRAPDs) have been fabricated on ITO(indium tin oxide)/glass substrates by plasma-enhanced chemical vapor deposition (PECVD). For a typical electron-injection SRAPD, the ratio of room-temperature electron and hole impact ionization rates (α/β) is 10.2 at an electric field 3.33×106 V/cm, the optical gain is 506 at an applied reverse-bias VR=18 V and an incident power Pin=5 μW emitted from a He-Ne laser, the rise time is 1 μs at a load resistance RL 1 kΩ, and the excess noise factor is 6.53 at a multiplication M=48
Keywords :
amorphous semiconductors; avalanche photodiodes; electron device noise; semiconductor superlattices; silicon; silicon compounds; 1 kohm; 1 mus; 18 V; 5 muW; He-Ne laser; InSnO-Jk; PECVD; SiC:H-Si:H-InSnO-Jk; amorphous Si:H-SiC:H superlattice; avalanche photodiodes; excess noise factor; incident power; load resistance; noise characteristics; optical characteristics; optical gain; performance; reverse-bias; rise time; superlattice reach-through APDs; Amorphous materials; Avalanche photodiodes; Chemical vapor deposition; Glass; Optical noise; Optical superlattices; Plasma chemistry; Plasma properties; Silicon carbide; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
