A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique

Author

Yang, Ching-Yuan ; Chang, Chih-Hsiang ; Lin, Jung-Mao ; Weng, Jun-Hong

Author_Institution

Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

Volume

21

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

163

Lastpage

165

Abstract

Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 μm CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n junction capacitance and the varied transconductance in the intrinsic-tuned regime, the VCO provides the tuning range of 9.95 to 11.05 GHz at a 0.6 V supply and dissipates below 4.35 mW. At 11 GHz carrier frequency, the measured phase noise is -110.4 dBc/Hz at a 1 MHz offset.

Keywords

CMOS integrated circuits; integrated circuit noise; p-n junctions; phase noise; voltage-controlled oscillators; CMOS VCO; carrier frequency; frequency 10 GHz; frequency 11 GHz; high-frequency design; low-voltage design; negative-transconductance back-gate tuning; p-n junction capacitance; phase noise; size 0.18 mum; voltage 0.6 V; voltage-controlled oscillator; wide-range design; Capacitance; Transconductance; Transistors; Tuning; Voltage-controlled oscillators; Wireless communication; Back-gate MOS; varied p-n junction capacitance; varied transconductance; voltage-controlled oscillator (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2102011

Filename

5713212