DocumentCode
1449663
Title
Study of Structure, Magnetic and Electrical Properties of Co 
MnSi
Author
Nahid, M.A.I. ; Oogane, Mikihiko ; Naganuma, Hiroshi ; Ando, Yasuo
Author_Institution
Dept. of Appl. Phys., Tohoku Univ., Sendai, Japan
Volume
45
Issue
10
fYear
2009
Firstpage
4030
Lastpage
4032
Abstract
The structural, magnetic and electrical properties of Co2MnSi thin films grown onto n-doped Si(110) and n-Si(100) substrates were studied. The structure and magnetic properties of Co2MnSi thin films were found to depend strongly on the annealing temperature (T A). At T A = 275-350degC, the Co2MnSi films were of B2 phase with lang100rang texture and possessed magnetic moment on both substrates. The saturation magnetization (M S) of Co2MnSi thin films was found maximum at T A = 300degC. Chemical reaction might occur between Co2MnSi and Si above T A = 350degC which caused nearly zero M S value. The current-voltage (I-V) characteristic of the Co2MnSi thin films onto n-Si substrates was obtained linear suggesting the contacts were ohmic nature.
Keywords
annealing; cobalt alloys; elemental semiconductors; magnetic moments; magnetic thin films; manganese alloys; metallic thin films; ohmic contacts; silicon; silicon alloys; spin polarised transport; texture; Co2MnSi-Si; Heusler alloy thin films; Si; Si(100) substrate; Si(110) substrate; annealing temperature; chemical reaction; current-voltage characteristics; electrical properties; magnetic moment; magnetic properties; n-Si substrate; ohmic contacts; saturation magnetization; spin injection; structural properties; temperature 275 C to 350 C; texture; B2 phase; half-metallic ferromagnets; silicide; spin injection;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2009.2024320
Filename
5257081
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