DocumentCode :
1449663
Title :
Study of Structure, Magnetic and Electrical Properties of Co 
MnSi
Author :
Nahid, M.A.I. ; Oogane, Mikihiko ; Naganuma, Hiroshi ; Ando, Yasuo
Author_Institution :
Dept. of Appl. Phys., Tohoku Univ., Sendai, Japan
Volume :
45
Issue :
10
fYear :
2009
Firstpage :
4030
Lastpage :
4032
Abstract :
The structural, magnetic and electrical properties of Co2MnSi thin films grown onto n-doped Si(110) and n-Si(100) substrates were studied. The structure and magnetic properties of Co2MnSi thin films were found to depend strongly on the annealing temperature (T A). At T A = 275-350degC, the Co2MnSi films were of B2 phase with lang100rang texture and possessed magnetic moment on both substrates. The saturation magnetization (M S) of Co2MnSi thin films was found maximum at T A = 300degC. Chemical reaction might occur between Co2MnSi and Si above T A = 350degC which caused nearly zero M S value. The current-voltage (I-V) characteristic of the Co2MnSi thin films onto n-Si substrates was obtained linear suggesting the contacts were ohmic nature.
Keywords :
annealing; cobalt alloys; elemental semiconductors; magnetic moments; magnetic thin films; manganese alloys; metallic thin films; ohmic contacts; silicon; silicon alloys; spin polarised transport; texture; Co2MnSi-Si; Heusler alloy thin films; Si; Si(100) substrate; Si(110) substrate; annealing temperature; chemical reaction; current-voltage characteristics; electrical properties; magnetic moment; magnetic properties; n-Si substrate; ohmic contacts; saturation magnetization; spin injection; structural properties; temperature 275 C to 350 C; texture; B2 phase; half-metallic ferromagnets; silicide; spin injection;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2009.2024320
Filename :
5257081
Link To Document :
