DocumentCode
1449687
Title
Memristance View of Piezoelectricity
Author
Ukil, Abhisek
Author_Institution
ABB Corp. Res., Baden-Daettwil, Switzerland
Volume
11
Issue
10
fYear
2011
Firstpage
2514
Lastpage
2517
Abstract
In recent times, there have been significant focus on the memristor which is classified as the fourth basic circuit element. In 2008, teams from HP-labs showed possible fabrication of nonlinear memory-dependent variable resistors using titanium dioxide (TiO2)-based materials. Memristance can be viewed as the generalized resistance which depends on the internal state of the device. In other words, memristance is charge dependent. In this context, it is interesting to pay attention to the reversible piezoelectric effect. Certain piezoelectric crystals and ceramics develop voltage when put under external mechanical stress (direct effect), or deform in shape under voltage (converse effect). In this paper, we propose to view the piezoelectric effect in terms of the memristance theory.
Keywords
deformation; micromechanical devices; piezoceramics; piezoelectricity; resistors; titanium compounds; ceramics; deformation; external mechanical stress; memristance view; nonlinear memory-dependent variable resistors; piezoelectric crystals; piezoelectricity; reversible piezoelectric effect; titanium dioxide-based materials; Materials; Metals; Piezoelectric effect; Resistance; Strain; Stress; Chalcogenide alloys; circuit element; direct piezoelectricity; linear piezoelectric theory; memory-dependent resistor; memristor; metal oxide; phase change memory; reverse piezoelectricity; varistor;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2011.2114878
Filename
5713221
Link To Document