• DocumentCode
    1449687
  • Title

    Memristance View of Piezoelectricity

  • Author

    Ukil, Abhisek

  • Author_Institution
    ABB Corp. Res., Baden-Daettwil, Switzerland
  • Volume
    11
  • Issue
    10
  • fYear
    2011
  • Firstpage
    2514
  • Lastpage
    2517
  • Abstract
    In recent times, there have been significant focus on the memristor which is classified as the fourth basic circuit element. In 2008, teams from HP-labs showed possible fabrication of nonlinear memory-dependent variable resistors using titanium dioxide (TiO2)-based materials. Memristance can be viewed as the generalized resistance which depends on the internal state of the device. In other words, memristance is charge dependent. In this context, it is interesting to pay attention to the reversible piezoelectric effect. Certain piezoelectric crystals and ceramics develop voltage when put under external mechanical stress (direct effect), or deform in shape under voltage (converse effect). In this paper, we propose to view the piezoelectric effect in terms of the memristance theory.
  • Keywords
    deformation; micromechanical devices; piezoceramics; piezoelectricity; resistors; titanium compounds; ceramics; deformation; external mechanical stress; memristance view; nonlinear memory-dependent variable resistors; piezoelectric crystals; piezoelectricity; reversible piezoelectric effect; titanium dioxide-based materials; Materials; Metals; Piezoelectric effect; Resistance; Strain; Stress; Chalcogenide alloys; circuit element; direct piezoelectricity; linear piezoelectric theory; memory-dependent resistor; memristor; metal oxide; phase change memory; reverse piezoelectricity; varistor;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2011.2114878
  • Filename
    5713221