GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

Author

Nakajima, Akira ; Sumida, Yasunobu ; Dhyani, Mahesh H. ; Kawai, Hiroji ; Narayanan, E. M Sankara

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

Volume

32

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

542

Lastpage

544

Abstract

GaN super heterojunction field effect transistors (super HFET) based on the polarization junction concept are demonstrated for the first time. The super HFET has charges of 2-D electron gas and hole gas, respectively induced by positive and negative polarization charges at GaN/AlGaN/GaN heterointerfaces. Analogous to the RESURF concept, these unintentionally doped positive and negative polarization charges compensate each other in the off state condition to enhance the breakdown capability of the super HFET. The super HFETs have been fabricated on sapphire substrates and the electrical measurements show breakdown voltages over 1.1 kV with specific on-resistance of 6.1 mΩ· cm^2.

Keywords

III-V semiconductors; aluminium compounds; electron gas; gallium compounds; high electron mobility transistors; polarisation; wide band gap semiconductors; 2D electron gas; GaN-AlGaN-GaN; HFET; RESURF concept; breakdown voltages; electrical measurements; hole gas; negative polarization charges; polarization junction concept; positive polarization charges; sapphire substrates; super heterojunction field effect transistors; voltage 1.1 kV; Aluminum gallium nitride; Electrodes; Gallium nitride; HEMTs; Junctions; Logic gates; MODFETs; 2-D hole gas; GaN; polarization junction (PJ); super junction;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2105242

Filename

5713226