Author :
Azouigui, S. ; Cong, D.-Y. ; Martinez, A. ; Merghem, K. ; Zou, Q. ; Provost, J.-G. ; Dagens, B. ; Fischer, M. ; Gerschütz, F. ; Koeth, J. ; Krestnikov, I. ; Kovsh, A. ; Ramdane, A.
Abstract :
The temperature dependence of the dynamic performance of p-doped InAs/GaAs quantum-dot distributed feedback (DFB) lasers emitting at 1.3 μm is investigated. A maximum relaxation frequency of ~7 GHz is demonstrated for a constant bias current over the whole 25°C-85°C temperature range. The Henry factor is temperature independent and remains constant at ~2.5. The effect of external optical feedback is assessed on the same device in a 10-Gb/s transmission over 20 km.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; laser feedback; quantum dot lasers; Henry factor; InAs-GaAs; bias current; bit rate 10 Gbit/s; distance 20 km; distributed feedback lasers; high-speed DFB quantum-dot lasers; optical feedback; relaxation frequency; temperature 25 degC to 85 degC; temperature dependent dynamic properties; wavelength 1.3 mum; Distributed feedback devices; Gallium arsenide; Laser feedback; Optical feedback; Quantum dot lasers; Temperature; Coherence collapse; optical feedback; quantum dot (QD); semiconductor laser;