Monolithic transformers and their application in a differential CMOS RF low-noise amplifier

Author

Zhou, Jianjun J. ; Allstot, David J.

Volume

33

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2020

Lastpage

2027

Abstract

A 900 MHz low-noise amplifier (LNA) utilizing three monolithic transformers to implement on-chip tuning networks and requiring no external components has been integrated in 2.88 mm² in a standard digital 0.6 μm CMOS process. A bias current reuse technique is employed to reduce power dissipation, and process-, voltage-, and temperature-tracking biasing techniques are used. At 900 MHz, the LNA dissipates 18 mW from a single 3 V power supply and provides 4.1 dB noise figure, 12.3 dB power gain, -33.0 dB reverse isolation, and an input 1-db compression level of -16 dBm. Analysis and modeling considerations for silicon-based monolithic transformers are presented, and it is shown that a monolithic transformer occupies less die area and provides a higher quality factor than two independent inductors with the same effective inductance in differential applications

Keywords

CMOS analogue integrated circuits; Q-factor; UHF amplifiers; circuit tuning; differential amplifiers; differential transformers; integrated circuit noise; 0.6 micron; 12.3 dB; 18 mW; 3 V; 4.1 dB; 900 MHz; Si; bias current reuse; compression level; die area; differential CMOS RF low noise amplifier; monolithic transformer; noise figure; on-chip tuning network; power dissipation; power gain; process tracking; quality factor; reverse isolation; temperature tracking; voltage tracking; CMOS process; Gain; Inductors; Low-noise amplifiers; Network-on-a-chip; Noise figure; Power dissipation; Power supplies; Q factor; Transformers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.735543

Filename

735543