RF circuit design aspects of spiral inductors on silicon

Author

Burghartz, Joachim N. ; Edelstein, D.C. ; Soyuer, Mehmet ; Ainspan, H.A. ; Jenkins, Keith A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

33

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2028

Lastpage

2034

Abstract

The design and optimization of spiral inductors on silicon substrates, the related layout issues in integrated circuits, and the effect of the inductor-Q an the performance of radio-frequency (RF) building blocks are discussed. Integrated spiral inductors with inductances of 0.5-100 nH and Q´s up to 40 are shown to be feasible in very-large-scale-integration silicon technology. Circuit design aspects, such as a minimum inductor area, the cross talk between inductors, and the effect of a substrate contact on the inductor characteristics are addressed. Important RF building blocks, such as a bandpass filter, low-noise amplifier, and voltage-controlled oscillator are shown to benefit substantially from an improved inductor-Q

Keywords

Q-factor; VLSI; crosstalk; elemental semiconductors; inductors; integrated circuit layout; silicon; Q-factor; RF circuit design; Si; VLSI technology; bandpass filter; crosstalk; inductance; integrated circuit layout; low noise amplifier; minimum area; optimization; radiofrequency building block; silicon substrate; spiral inductor; substrate contact; voltage controlled oscillator; Circuit synthesis; Design optimization; Inductors; Integrated circuit layout; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals; Very large scale integration;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.735544

Filename

735544