Title :
4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on SOI, SOS, and bulk substrates
Author :
Ho, Yo-Chuol ; Kim, Ki-Hong ; Floyd, Brian A. ; Wann, Clement ; Taur, Yuan ; Lagnado, Isaac ; O, K.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and Fmin´s of 4.5 (bulk) and 3.5 db (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and Funn´s of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0.1-1 μm CMOS process
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; circuit tuning; field effect MMIC; integrated circuit design; silicon-on-insulator; substrates; 0.1 micron; 13 GHz; 4 GHz; 5.3 to 14 dB; Al2O3; CMOS amplifiers; CMOS technology; SHF tuned amplifiers; SOI substrates; SOS substrates; Si; bulk substrates; CMOS process; CMOS technology; Inductors; Low-noise amplifiers; Parasitic capacitance; Radio frequency; Radiofrequency amplifiers; Resonant frequency; Silicon on insulator technology; Transducers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
