A 2.7-5.5 V, 0.2-1 W BiCMOS RF driver amplifier IC with closed-loop power control and biasing functions

Author

Wong, Stephen L. ; Luo, Sifen

Author_Institution

Philips Res., Briarcliff, NY, USA

Volume

33

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2259

Lastpage

2264

Abstract

A 800-900 MHz BiCMOS driver amplifier with 30 dB gain is integrated with various functions of a power control loop which includes a peak power detector, an integrator filter, gain control circuitry, and a voltage regulator for biasing a discrete power device. To add to its versatility, the IC is pad-programmable to deliver either 0.25 W/0.5 W/1.0 of RF power while maintaining a power added efficiency of 35 to 40% in each case. This has been shown to be useful in creating 1-4 W power amplifier solutions with over 50% efficiency. In closed-loop configuration, this IC provides better than 1 dB of output power control over a dynamic range of 25 dB

Keywords

BiCMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; closed loop systems; driver circuits; power control; programmable circuits; 0.2 to 1 W; 2.7 to 5.5 V; 30 dB; 35 to 40 percent; 800 to 900 MHz; BiCMOS RF driver amplifier IC; biasing function; closed loop power control; discrete power device; dynamic range; gain control circuit; integrator filter; pad programmable IC; peak power detector; power added efficiency; power amplifier; voltage regulator; BiCMOS integrated circuits; Detectors; Driver circuits; Filters; Gain; Power amplifiers; Power control; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.735711

Filename

735711