Title :
A 1-V multigigahertz RF mixer core in 0.5-μm CMOS
Author_Institution :
Wireless Res. Lab., AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
Mixing was realized in a four-terminal MOS transistor by applying radio-frequency and local oscillator (LO) signals to the front and back gates of the device. A mixer core so designed in a 0.5 μm CMOS process is able to operate with 1 V supply and less than 0.2 mW of power while having a conversion gain up to 10 GHz using 0 dBm LO. Measured results include: 6 dB gain, 9.6 dB noise figure, 10 dBm IIP3 at 2 GHz and 6 dB gain, 18 dB noise figure, and -2 dBm IIP3 at 7 GHz
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF mixers; low-power electronics; 0.2 mW; 0.5 micron; 1 V; 18 dB; 2 GHz; 6 dB; 7 GHz; 9.6 dB; CMOS chip; IIP3; RF mixer core; conversion gain; four-terminal MOS transistor; local oscillator signal; noise figure; radiofrequency signal; CMOS technology; Circuit testing; Gain measurement; Low voltage; MOSFETs; Mixers; Noise figure; Nonlinear distortion; Radio frequency; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
