Title :
A C-switch cell for low-voltage and high-density SRAMs
Author :
Kuriyama, Hirotada ; Ishigaki, Yoshiyuki ; Fujii, Yasuhiro ; Maegawa, Shigeto ; Maeda, Shigenobu ; Miyamoto, Shouichi ; Tsutsumi, Kazuhito ; Miyoshi, Hirokazu ; Yasuoka, Akihiko
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
12/1/1998 12:00:00 AM
Abstract :
We propose a novel static random access memory (SRAM) cell named complementary-switch (C-switch) cell. The proposed SRAM cell features: (1) C-switch in which an n-channel bulk transistor and a p-channel TFT are combined in parallel; (2) single-bit-line architecture; (3) gate-all-around TFT (GAT) with large ON-current of μA order. With these three features, the proposed cell enjoys stability at 1.5 V and is 16% smaller in size than conventional cells. The C-switch cell is built with only a triple poly-Si and one metal process using 0.3 μm design rules
Keywords :
SRAM chips; circuit stability; integrated circuit design; low-power electronics; memory architecture; thin film transistors; 0.3 micron; 1.5 V; C-switch cell; complementary-switch cell; design rules; gate-all-around TFT; high-density SRAM; low-voltage circuits; metal process; n-channel bulk transistor; p-channel TFT; single-bit-line architecture; stability; triple polysilicon process; Energy consumption; Equivalent circuits; Low voltage; Random access memory; SRAM chips; Stability; Thin film transistors; Timing; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
